[15p-301-2~10] The research forefront of plasma processing technology for energy related materials

[15p-301-5] Plasma Application for Nitride Crystal Growth

〇Osamu Oda¹, Hiroyuki Kano², Shoji Den³, Hiroyuki Kondo¹, Masaru Hori¹ (1.Nagoya Univ., 2.NU-Rei Co., 3.Katagiri Eng. Co.)

Keywords:nitride semiconductor, crystal growth, plasma application

We will review the applications of plasma technology to the crystal growth of nitrides, such as high density radical sources (HDRS) for molecular beam epitaxy (MBE) and the radical enhanced metal organic chemical vapor deposition (REMOCVD) method. In the crystal growth of nitride semiconductors by MBE using conventional radical sources, the crystal growth rate was small because of the low radical density, We have developed a novel HDRS which is based on the combination of induced coupled plasma (ICP) and capacity coupled plasma (CCP) for increasing the nitrogen radical density and could find that the growth rate could be increased up to 2.5μ/h. We have also developed a novel REMOCVD method by which we can grow nitride semiconductors such as GaN, AlN and InN at lower temperatures without using costly ammonia gas.