The 64th JSAP Spring Meeting, 2017

Presentation information

Symposium (Oral)

Symposium » Highly reliable metallization technology for long term retention

[15p-304-1~10] Highly reliable metallization technology for long term retention

Wed. Mar 15, 2017 1:15 PM - 6:00 PM 304 (304)

Shinji Yokogawa(UEC), Eiichi Kondoh(U. Yamanashi)

1:15 PM - 1:30 PM

[15p-304-1] Highly Reliable Metallization Technology for Long Term Retention

Kazuyoshi Ueno1,2 (1.Shibaura Inst. Tech., 2.SIT RC Green Innov.)

Keywords:semiconductor memory, long term retention, metallization

Non-volatile memories are expected as the potential media for long term retention of degital data which increases year by year. However, the traditional LSIs have not been developed for such long term data retention over 100 years, since the LSIs have been mostly designed for data processing and short term data retention. To use LSIs as the media for long term data retention, it is considered to be required to improve the reliability of the ineterconnects and the electrode pads for long term storage in environment such as corrosion. In this symposium, we will discuss on the challenges and chances in the metallization technology for the long term memory over 100 years.