[15p-315-1~17] 13.8 Compound and power electron devices and process technology

[15p-315-13] Ga₂O₃ Schottky Barrier Diode with Trench MOS Structure

〇Kohei Sasaki^1,2, Daiki Wakimoto^1,2, Quang Tu Thieu¹, Yuki Koishikawa^1,2, Akito Kuramata^1,2, Masataka Higashiwaki³, Shigenobu Yamakoshi^1,2 (1.Novel Crystal Tech., 2.Tamura Corp., 3.NICT)

Keywords:Ga2O3, Schottky, trench

β-Ga₂O₃ is a suitable material for next generation high power devices. We have developed the Ga₂O₃ SBDs with trench MOS structure. The devices showed several orders of magnitude smaller leakage than the SBDs without trench MOS structure. We have demonstrated that the introducing the trench MOS structure is effective for decreasing the leakage current of Ga₂O₃ SBDs.