[15p-315-1~17] 13.8 Compound and power electron devices and process technology

▲ [15p-315-15] Mg Ion Implantation Technology for Vertical Ga₂O₃ Power Devices

〇ManHoi Wong¹, Ken Goto^2,3, Rie Togashi³, Hisashi Murakami³, Yoshinao Kumagai³, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corporation, 3.Tokyo Univ. Agricul. Technol.)

Keywords:Ga2O3, Mg ion implantation, current blocking

Vertical n-Ga₂O₃ power devices make use of insulating or p-type materials for forming current blocking layers (CBLs) to prevent direct source-drain leakage. Mg-ion-implanted Ga₂O₃ was investigated in this work as a CBL in light of semi-insulating Ga₂O₃ obtained by Mg compensation doping of n-type bulk crystals. Systematic thermal anneals and electrical measurements presented evidence of implant activation and illustrated a pathway for forming CBLs in Ga₂O₃ devices.