[15p-315-1~17] 13.8 化合物及びパワー電子デバイス・プロセス技術

▲ [15p-315-15] Mg Ion Implantation Technology for Vertical Ga₂O₃ Power Devices

〇Wong ManHoi¹、Goto Ken^2,3、Togashi Rie³、Murakami Hisashi³、Kumagai Yoshinao³、Kuramata Akito²、Yamakoshi Shigenobu²、Higashiwaki Masataka¹ (1.NICT、2.Tamura Corporation、3.Tokyo Univ. Agricul. Technol.)

キーワード：Ga2O3, Mg ion implantation, current blocking

Vertical n-Ga₂O₃ power devices make use of insulating or p-type materials for forming current blocking layers (CBLs) to prevent direct source-drain leakage. Mg-ion-implanted Ga₂O₃ was investigated in this work as a CBL in light of semi-insulating Ga₂O₃ obtained by Mg compensation doping of n-type bulk crystals. Systematic thermal anneals and electrical measurements presented evidence of implant activation and illustrated a pathway for forming CBLs in Ga₂O₃ devices.