Diffusion of Ga into SiO<sub>2</sub> Layer in SiO<sub>2</sub>/GaN Structures and Its Impact on Electrical Properties

Takahiro Yamada; Kenta Watanabe; Mikito Nozaki; Katsunori Ueno; Shinya Takashima; Masaharu Edo; Tokio Takahashi; Mitsuaki Shimizu; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[15p-315-1~17] 13.8 Compound and power electron devices and process technology

Wed. Mar 15, 2017 1:15 PM - 5:45 PM 315 (315)

Naoteru Shigekawa(Osaka City Univ.), Hiroshi Okada(Toyohashi Univ. of Tech.)

2:30 PM - 2:45 PM

[15p-315-6] Diffusion of Ga into SiO₂ Layer in SiO₂/GaN Structures and Its Impact on Electrical Properties

〇Takahiro Yamada¹, Kenta Watanabe¹, Mikito Nozaki¹, Katsunori Ueno², Shinya Takashima², Masaharu Edo², Tokio Takahashi³, Mitsuaki Shimizu³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Fuji Electric, 3.AIST)

Keywords:GaN, Diffusion, SiO2

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Presentation information

[15p-315-1~17] 13.8 Compound and power electron devices and process technology

[15p-315-6] Diffusion of Ga into SiO2 Layer in SiO2/GaN Structures and Its Impact on Electrical Properties

[15p-315-6] Diffusion of Ga into SiO₂ Layer in SiO₂/GaN Structures and Its Impact on Electrical Properties