[15p-315-1~17] 13.8 Compound and power electron devices and process technology

[15p-315-5] Simulation of GaN MOS-Capacitor Frequency-dependent C-V Characteristics

〇Koichi Fukuda¹, Junichi Hattori¹, Mitsuaki Shimizu¹, Tamotsu Hashizume² (1.AIST, 2.Hokkaido Univ.)

Keywords:GaN, MOS Capacitor, Device Simulation

Frequency dependence of GaN MOS capacitors is studied using transient simulation of semiconductor device simulation with deep interface trap model.