[15p-411-1~16] 13.9 Optical properties and light-emitting devices

[15p-411-14] Investigation on energy transfer processes in Eu-doped GaN
by two-wavelength excited photoluminescence measurements

〇Hiroaki Kogame¹, Takanori Kojima¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

Keywords:GaN, Eu, TWE-effect

Realizing red emission from GaN-based semiconductors is a key technology to develop a small-size high-resolution full-color inorganic light-emitting display. We have succeeded in growing Eu-doped GaN (GaN:Eu) layers with high crystalline quality by organometallic vapor phase epitaxy. Light output power of the LEDs has been increasing steadily to sub-mW. To obtain the output power in a 1 mW class, the understanding of energy transfer mechanism from the GaN host to Eu luminescent sites is important. In this contribution, we investigated excitation mechanism of major Eu luminescent sites (OMVPE 4 and 7) in GaN:Eu by two-wavelength excited photoluminescence measurements.ments.