[15p-422-1~16] 3.13 Semiconductor optical devices

△ [15p-422-12] Temperature Dependence of Threshold Current of GaInAsP/InP Membrane DFB Lasers by Bragg Wavelength Detuning

〇Kai Fukuda¹, Daisuke Inoue¹, Takuo Hiratani¹, Takahiro Tomiyasu¹, Tatsuya Uryu¹, Tomohiro Amemiya^1,2, Nobuhiko Nishiyama^1,2, Shigehisa Arai^1,2 (1.Tokyo Tech., 2.IIR)

Keywords:semiconductor laser, membrane structure, DFB laser

We have proposed membrane DFB lasers as a light source for On-chip optical interconnection technology. In this study, we fabricated Membrane DFB laser with Bragg wavelength detuning for the purpose of Improvement of characteristic temperature. As a result, at 20 ° C <T<45 ° C, threshold current characteristic was almost independent of temperature.