[15p-422-1~16] 3.13 Semiconductor optical devices

[15p-422-14] Increase of Current Gain of 1.3-μm npn-AlGaInAs/InP Transistor Laser by Less Bandgap of p-GaInAsP Base Layer

〇(B)Shoichi Yoshitomi¹, Shotaro Tadano¹, Kentaro Yamanaka¹, Nobuhiko Nishiyama^1,2, Shigehisa Arai^1,2 (1.DEEE, TIT, 2.IIT, TIT)

Keywords:semiconductor laser