[15p-501-1~19] CS.6 10.1,10.2,10.3,10.4コードシェアセッション「新規スピン操作方法および関連現象」

▼ [15p-501-3] Electric field effect on perpendicular magnetic anisotropy in Ta/CoFeB/Mg_1-xTi_xO

〇(P)Ikh Tiar¹、Kasai Shinya¹、Cheng Pohan^1,2、Mukaiyama Koki¹、Ohkubo Tadakatsu¹、Hono Kazuhiro^1,2 (1.National Institute for Materials Science、2.University of Tsukuba)

キーワード：PMA, MTJ, MRAM

The increasing capacity of magnetic random access memory (MRAM) requires the increase of perpendicular magnetic anisotropy (PMA) energy to maintain the thermal stability of free layer pillars in magnetic tunnel junctions (MTJs). In order to gain the maximum advantage of electric field control of PMA, the PMA change for a given electric field E must scale with the magnitude of PMA. In addition, the electric field should decrease the PMA energy for at least one polarity. By the use of two different barrier materials, we observed two different areal PMA energy (K_efft) dependences on barrier thickness. This trend can be qualitatively reproduced for bottom-CoFeB pillars in orthogonal MTJs that enable us to investigate the electric field effect on various PMA energy levels, ξ =ΔK_efft/ΔE, while keeping the same condition for Ta underlayer.