[15p-503-1~16] 15.4 III-V族窒化物結晶

▲ [15p-503-13] Morphology control of InGaN layer on GaN substrate by metalorganic vapor phase epitaxy

〇(D)Liu Zhibin¹、Miyagoshi Ryosuke¹、Nitta Shugo²、Honda Yoshio²、Amano Hiroshi^2,3,4 (1.Graduate of Engi., Nagoya Univ.、2.IMASS, Nagoya Univ.、3.ARC, Nagoya Univ.、4.VBL, Nagoya Univ.)

キーワード：mophology, InGaN, MOVPE

Nowadays, nitride-based semiconductor allows people to obtain light emission from the ultraviolet to the infrared and get good optical property. However, the EQE is still low for high-In-content InGaN optoelectronic devices because of poor quality in InGaN layer. One of the major issues is low growth temperature for high In-content InGaN deposition as well as large lattice mismatch between GaN and InN. Though the morphology of InGaN layer grown by MOVPE has been studied by some research groups, the relationship between the morphology of InGaN layers on GaN substrate and growth conditions has not yet been systematically investigated. In this work, we demonstrated InGaN layer growth on GaN substrate. The dependence of InGaN layer morphology on growth parameters, including growth rate and metalorganic source flow rate are investigated.