[15p-503-1~16] 15.4 III-V-group nitride crystals

[15p-503-15] Dislocation Observation and Strain Analysis in AlGaN/GaN Hetero-Structure

〇Sachi Niki¹, Junko Maekawa¹, Masahiko Aoki¹, Yudai Yamamoto², Toshiya Yokogawa² (1.ITC, 2.Yamaguchi Univ.)

Keywords:semiconductor, nitride, TEM

Dislocation observation and distortion analysis (geometric phase analysis) by HRTEM were performed on AlGaN / GaN layers of a lateral semiconductor device. The strain in the c-axis direction of the AlGaN layer with respect to the GaN region was compressive. In addition, it was confirmed that the distribution of the dislocation was correspondent to that of the strain, which was compressive or tensile and periodically distributed in the c-axis direction.