[15p-503-1~16] 15.4 III-V-group nitride crystals

[15p-503-16] Investigation of core structure of inclined threading dislocation in GaN layer

〇Tohoru Matsubara^1,2, Kohei Sugimoto¹, Shin Goubara¹, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University, 2.UBE Scientific Analysis Laboratory)

Keywords:GaN, threading dislocation, core structure

We have evaluated atomic arrangements in threading dislocation cores using cross-sectional and plan-view scanning transmission electron microscopy (STEM). We found the extra displacement in a-type threading dislocations. In this study, we investigated both the atomic arrangements in the core structure and inclination of threading dislocations in GaN layers grown by MOVPE and HVPE using STEM.