[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[15p-F204-9] Mapping of Ni/p-3C-SiC Shottky contacts on 6H-SiC substrate by using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Naoki Mishina¹, Naoto Ichikawa², Masashi Kato² (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)

Keywords:3C-SiC, SIPM, Schottky contact

We have mapped 3C-SiC layers gorwn on 6H-SiC substrates by using SIPM. We found a mixed surface of 3C- and 6H-SiC, and SIPM clearly visualized the pattern of these polytypes.