[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[15p-F204-8] Formation of Ohmic Contact on the n-type 4H-SiC by Si Cap Annealing

〇(M2)Taichi Taniguchi¹ (1.Hiroshima Univ.)

Keywords:semiconductor, SiC, Ohmic contact