The 64th JSAP Spring Meeting, 2017

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[15p-P14-1~11] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

Wed. Mar 15, 2017 4:00 PM - 6:00 PM P14 (BP)

4:00 PM - 6:00 PM

[15p-P14-1] Surface oxidation process of silicon-rich SiN films under humid environment

Tomoki Oku1, Toshihiko Shiga1, Masahiro Totsuka1, Shinichi Takagi1 (1.Mitsubishi Electric)

Keywords:Silicon nitride, Humid resistivity, Molecular orbital calculation

We applied the semi-empirical molecular orbital calculations to analyze the degradation of the humid resistance of silicon-rich silicon nitride (SiNx) films from the point of view of the surface oxidation process. There are no large difference in both the reaction barrier and the formation energy of 1st and 2nd attack of H3O+ and OH- ion between on the films with anti-site silicon and on them with either silicon or nitrogen vacancies. However, our calculation shows that the 2nd attack changes excess silicon atoms into Si(OH)n molecules. Since the continuous attacks desorb Si(OH)n molecules and leave the broken bonds in the films, we consider that the humid resistance of silicon-rich SiNx films is not superior to that of Si3N4 films.