The 64th JSAP Spring Meeting, 2017

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[15p-P14-1~11] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

Wed. Mar 15, 2017 4:00 PM - 6:00 PM P14 (BP)

4:00 PM - 6:00 PM

[15p-P14-11] Thermal stability of Al2O3/SiO2 mixed oxide for GaN-MOS gate insulator

Kenji Ito1, Daigo Kikuta1, Tetsuo Narita1, Keita Kataoka1, Tomohiko Mori1 (1.Toyota Central R&D Labs.)

Keywords:gallium nitride, gate insulator, mixed oxide

We have investigated Al2O3/SiO2 mixed oxide for the gate insulator of GaN-MOS structure. Micro-crystallization of Al2O3 annealed at high temperature was the issue affecting the leakage current. We have found that the mixing of the SiO2 with Al2O3 is effective to prevent the micro-crystallization.