The 64th JSAP Spring Meeting, 2017

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[15p-P14-1~11] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

Wed. Mar 15, 2017 4:00 PM - 6:00 PM P14 (BP)

4:00 PM - 6:00 PM

[15p-P14-10] Development of Formation Technique of Gate SiO2 Layer for GaN Power Transistors

Takuya Maekawa1, Shiniti Ogiso1, Keisuke Arimoto1, JunJi Yamanaka1, Tetuji Arai1, Kiyokazu Nakagawa1, Toshiyuki Takamatsu2, Katunori Ueno3 (1.Yamanashi Univ., 2.SST, 3.Fujidenki)

Keywords:insulating film, SiO2, GaN