[15p-P14-1~11] 13.3 Insulator technology

[15p-P14-11] Thermal stability of Al₂O₃/SiO₂ mixed oxide for GaN-MOS gate insulator

〇Kenji Ito¹, Daigo Kikuta¹, Tetsuo Narita¹, Keita Kataoka¹, Tomohiko Mori¹ (1.Toyota Central R&D Labs.)

Keywords:gallium nitride, gate insulator, mixed oxide

We have investigated Al₂O₃/SiO₂ mixed oxide for the gate insulator of GaN-MOS structure. Micro-crystallization of Al₂O₃ annealed at high temperature was the issue affecting the leakage current. We have found that the mixing of the SiO₂ with Al₂O₃ is effective to prevent the micro-crystallization.