The 64th JSAP Spring Meeting, 2017

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[15p-P14-1~11] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

Wed. Mar 15, 2017 4:00 PM - 6:00 PM P14 (BP)

4:00 PM - 6:00 PM

[15p-P14-3] Trichloroethene Concentration Effect on Deposition Rate and Properties of Low-Temperature Grown SiO2 Films by using Silicone Oil and Ozone Gas

〇(D)Puneet Jain1, Susumu Horita1 (1.Japan Adv. Inst. Sci. & Tech. (JAIST))

Keywords:APCVD, SiO2 Thin Film

SiO2 thin films are formed by atmospheric pressure chemical vapor deposition (APCVD) using silicone oil and ozone gas. Apart from silicone oil and ozone gas, trichloroethene was also added during the depositions. The deposition rate of the films increases with an increase in the concentration of trichloroethene, but excess of trichloroethene concentration enhances gas phase reaction, which reduces deposition rate. These films also contain non-negligible amount of Si-OH bonds. It was also observed that the Si-OH content in the deposited films does not depend much on the concentration of trichloroethene.