〇(D)Yuan Tu¹, Bin Han¹, Yasuo Shimizu¹, Yorinobu Kunimune², Yasuhiro Shimada², Masao Inoue³, Koji Inoue¹, Shinji Nagata¹, Yasuyoshi Nagai¹ (1.IMR Tohoku Univ., 2.Renesas Semiconductor Manufacturing Co., Ltd., 3.Renesas Electronics Corp.)

4:00 PM - 6:00 PM

[15p-P14-8] Detection of Strain Effect on Binding Energy of Ge 2p core level by HXPES with High Spatial Resolution

〇(B)Ryousuke Sano¹, Shiori Konoshima², Kouhei Takizawa², Kentaro Sawano¹, Hiroshi Nohira¹ (1.Tokyo City Univ., 2.Tokuo City Univ.)

4:00 PM - 6:00 PM

[15p-P14-9] Fabrication and Evaluation of SrTa₂O₆ thin films by RF Magnetron Sputtering

〇Takanori Takahashi¹, Takeshi Hoga¹, Kanji Yasui², Hisayuki Suematsu², Yukiharu Uraoka³, Kiyoshi Uchiyama¹ (1.National Institute of Technology, Tsuruoka College, 2.Nagaoka University of Technology, 3.Nara Institute of Science and Technology)

4:00 PM - 6:00 PM

[15p-P14-10] Development of Formation Technique of Gate SiO2 Layer for GaN Power Transistors

〇Takuya Maekawa¹, Shiniti Ogiso¹, Keisuke Arimoto¹, JunJi Yamanaka¹, Tetuji Arai¹, Kiyokazu Nakagawa¹, Toshiyuki Takamatsu², Katunori Ueno³ (1.Yamanashi Univ., 2.SST, 3.Fujidenki)

4:00 PM - 6:00 PM

[15p-P14-11] Thermal stability of Al₂O₃/SiO₂ mixed oxide for GaN-MOS gate insulator

〇Kenji Ito¹, Daigo Kikuta¹, Tetsuo Narita¹, Keita Kataoka¹, Tomohiko Mori¹ (1.Toyota Central R&D Labs.)

Oral presentation

[16a-413-1~12] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

Thu. Mar 16, 2017 9:00 AM - 12:15 PM 413 (413)

Takanobu Watanabe(Waseda Univ.), Kiyoteru Kobayashi(Tokai Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[16a-413-1] Theoretical study on interface orientation dependence of Si thermal oxidation

〇Takuya Nagura¹, Shingo Kawachi², Kenta Chokawa², Hiroki Shirakawa², Masaaki Araiadi^2,3,7, Hiroyuki Kageshima^4,7, Tetsuo Endoh^5,6,7, Kenji Shiraishi^2,3,7 (1.Nagoya Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.IMaSS, Nagoya Univ., 4.Interdisciplinary Graduate School of Science and Engineering, Shimane Univ., 5.Graduate School of Engineering, Tohoku Univ., 6.Center for Innovative Integrated Electronic Systems., 7.JST-ACCEL)

9:15 AM - 9:30 AM

[16a-413-2] Theoretical study on interface orientation dependence of Si thermal oxidation ofVertical-BC-MOSFET with compressive strain

〇Shingo Kawachi¹, Hiroki Shirakawa¹, Kenta Chokawa¹, Masaaki Araidai^1,2,6, Hiroyuki Kageshima^3,6, Tetsuo Endoh^4,5,6, Kenji Shiraishi^1,2,6 (1.Nagoya Univ., 2.IMaSS, 3.Shimane Univ., 4.Tohoku Univ., 5.CIES, 6.JST-ACCEL)

9:30 AM - 9:45 AM

[16a-413-3] Chemical Trends of Metal Species in Amorphous-SiO₂

〇Takeshi Miyajima¹, Hiroki Shirakawa², Masaaki Araidai^3,2, Kenji Shiraishi^3,2 (1.Nagoya Univ., 2.Graduate School of Engineering Nagoya Univ., 3.IMaSS, Nagoya Univ.)

9:45 AM - 10:00 AM

[16a-413-4] Operand Analysis of Si-MOS Diode by Hard X-ray Photoelectron Spectroscopy -Evaluation of Potential Changes and Chemical Bonding Features-

〇Akio Ohta¹, Hideki Murakami², Mitsuhisa Ikeda¹, Katsunori Makihara¹, Eiji Ikenaga³, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.NIT, Kurume College, 3.SPring-8)

10:00 AM - 10:15 AM

[16a-413-5] Characteristic of admittance in MOS structure with anodic oxide film

〇(M1)Tomoo Nakata¹, Ki Tyou¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

10:15 AM - 10:30 AM

[16a-413-6] Characterization Technique of Charge De-trapping in MIM Capacitors

〇Koudai Ozawa¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Tsukuba Univ.)

10:45 AM - 11:00 AM

△ [16a-413-7] Electric current conduction in ALD-Al₂O₃ films with O₃ treatment

〇(B)Satoshi Okubo¹, Daisuke Matsumura¹, Atsushi Hiraiwa^2,4, Hiroshi Kawarada^1,2,3 (1.Waseda Univ., 2.RONL, Waseda Univ., 3.KMLMST, Waseda Univ., 4.IMaSS, Nagoya Univ.)

11:00 AM - 11:15 AM

[16a-413-8] Thinning of high-k gate stack using new Flash Lamp Annealing (FLA) tool with low oxygen concentration (0.1ppm)

〇akitsugu Ueda¹, Hikaru Kawarazaki¹, Masashi Furukawa¹, Takayuki Aoyama¹, Shinichi Kato¹, Ippei Kobayashi¹ (1.SCREEN)

11:15 AM - 11:30 AM

[16a-413-9] Direct observation of Si surface band bending induced by the High-k/SiO₂ interface dipoles using laser THz emission microscope

〇Yasushi Hotta¹, Ikuya Saiki¹, Shintaro Nishi¹, Akira Itoh², Hidetoshi Nakanishi², Haruhiko Yoshida¹, Koji Arafune¹, Shin-ichi Satoh¹, Masayoshi Tonouchi³, Iwao Kawayama³ (1.Univ. of Hyogo, 2.SCREEN, 3.Osaka Univ.)

11:30 AM - 11:45 AM

[16a-413-10] Evaluation of Electron Affinity of HfO₂ and Interfacial Dipole from XPS Analysis

〇Nobuyuki Fujimura¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

11:45 AM - 12:00 PM

△ [16a-413-11] Study on the factors determining the formation and suppression of dipole layer at Al₂O₃/SiO₂ interface

〇(M1C)Hironobu Kamata¹, Koji Kita¹ (1.The Univ. of Tokyo)

12:00 PM - 12:15 PM

▼ [16a-413-12] Opportunity for dipole layer formation at an non-SiO₂ dielectric interface - MgO/Al₂O₃

〇(D)Jiayang Fei¹, Koji Kita¹ (1.The Univ. of Tokyo)

Oral presentation

[16p-413-1~11] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

Thu. Mar 16, 2017 2:00 PM - 5:00 PM 413 (413)

Toshifumi Irisawa(AIST), Shinichi Takagi(Univ.Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

2:00 PM - 2:15 PM

[16p-413-1] [JSAP Young Scientist Award Speech] Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al into gate stack

〇Yuta Nagatomi¹, Tomoki Oda¹, Taisei Sakaguchi¹, Keisuke Yamamoto¹, Dong Wang¹, Hiroshi Nakashima¹ (1.Kyushu Univ.)

2:15 PM - 2:30 PM

[16p-413-2] A Study for Improvement of GeO₂ Water Absorbency by Surface Nitridezation Treatment

〇Yosuke Sekiya¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of agri.& Tech.)

2:30 PM - 2:45 PM

[16p-413-3] The effect of Post Metallization Annealing for GeO₂/Ge structures using CVD method

〇Takumi Hadano¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Noukou Univ.)

2:45 PM - 3:00 PM

▼ [16p-413-4] Study of Thermal Oxidation Mechanism of Germanium

〇(D)Wang Xu¹, Tomonori Nishimura¹, Takeaki Yajima¹, Akira Toriumi¹ (1.Univ. of Tokyo)

3:00 PM - 3:15 PM

▼ [16p-413-5] Relationship between initial properties and reliability of Ge gate stacks

〇(D)Xiaoyu Tang^1,2, Akira Toriumi¹ (1.Univ. of Tokyo, 2.Nanjing Univ.)

3:15 PM - 3:30 PM

▼ [16p-413-6] Atomic exchange between Ge and Si at GeO₂/Si interface

〇(D)Woojin Song¹, Akira Toriumi¹ (1.The Univ. Tokyo)

3:45 PM - 4:00 PM

[16p-413-7] Effect of the Lu-doped La₂O₃ cap layer on La₂O₃/Ge(111) MIS structures

〇Masato Zenitaka¹, Hitohisa Furusho¹, Keisuke Yamamoto², Hiroshi Nakashima³, Kohei Hamaya¹, Takeshi Kanashima¹ (1.Osaka Univ., 2.IGSES. Kyushu Univ., 3.GIC. Kyushu Univ.)

4:00 PM - 4:15 PM

▲ [16p-413-8] MOS interface properties of ALD Al₂O₃/Y₂O₃/GeO_x/Ge gate stacks with plasma post oxidation

〇(D)Mengnan Ke¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Tokyo Univ.)

4:15 PM - 4:30 PM

[16p-413-9] Characterization of defect property in MOCVD-grown Ge_1-xSn_x gate stuck structures

〇Kaneda Yuichi¹, Shinichi Ike^1,2, Masayuki Kanematsu¹, Mitsuo Sakashita¹, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ, 2.JSPS Research Fellow, 3.IMaSS, Nagoya Univ)

4:30 PM - 4:45 PM

[16p-413-10] Pre-treatment Effects on Al₂O₃/In_xGa_1-xAs MOS Interface Properties and their Physics Model

〇Chiaki Yokoyama¹, Chih-Yu Chang², Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.The Univ. of Tokyo, Faculty of Eng., 2.The Univ. of Tokyo, School of Eng.)

4:45 PM - 5:00 PM

△ [16p-413-11] Dependence of the Mobility on Deposition Temperature and Al₂O₃ Thickness in MOSFETs with HfO₂/Al₂O₃/InGaAs Gate Stacks after H₂ Annealing

〇Kazuto Ohsawa¹, Shinji Noguchi¹, Seiko Netsu¹, Nobukazu Kise¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech)

Sessions

13 Semiconductors » 13.3 Insulator technology

[15p-P14-1~11] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

▲ [15p-P14-3] Trichloroethene Concentration Effect on Deposition Rate and Properties of Low-Temperature Grown SiO2 Films by using Silicone Oil and Ozone Gas

▲ [15p-P14-7] Atom Probe Tomographic Study on Implanted Deuterium in Al2O3/HfxSi1-xO2/SiO2 Stacks

[16a-413-1~12] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

△ [16a-413-7] Electric current conduction in ALD-Al2O3 films with O3 treatment

△ [16a-413-11] Study on the factors determining the formation and suppression of dipole layer at Al2O3/SiO2 interface

▼ [16a-413-12] Opportunity for dipole layer formation at an non-SiO2 dielectric interface - MgO/Al2O3

[16p-413-1~11] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

▼ [16p-413-4] Study of Thermal Oxidation Mechanism of Germanium

▼ [16p-413-5] Relationship between initial properties and reliability of Ge gate stacks

▼ [16p-413-6] Atomic exchange between Ge and Si at GeO2/Si interface

▲ [16p-413-8] MOS interface properties of ALD Al2O3/Y2O3/GeOx/Ge gate stacks with plasma post oxidation

△ [16p-413-11] Dependence of the Mobility on Deposition Temperature and Al2O3 Thickness in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks after H2 Annealing

Authentication

▲ [15p-P14-3] Trichloroethene Concentration Effect on Deposition Rate and Properties of Low-Temperature Grown SiO₂ Films by using Silicone Oil and Ozone Gas

▲ [15p-P14-7] Atom Probe Tomographic Study on Implanted Deuterium in Al₂O₃/Hf_xSi_1-xO₂/SiO₂ Stacks

△ [16a-413-7] Electric current conduction in ALD-Al₂O₃ films with O₃ treatment

△ [16a-413-11] Study on the factors determining the formation and suppression of dipole layer at Al₂O₃/SiO₂ interface

▼ [16a-413-12] Opportunity for dipole layer formation at an non-SiO₂ dielectric interface - MgO/Al₂O₃

▼ [16p-413-6] Atomic exchange between Ge and Si at GeO₂/Si interface

▲ [16p-413-8] MOS interface properties of ALD Al₂O₃/Y₂O₃/GeO_x/Ge gate stacks with plasma post oxidation

△ [16p-413-11] Dependence of the Mobility on Deposition Temperature and Al₂O₃ Thickness in MOSFETs with HfO₂/Al₂O₃/InGaAs Gate Stacks after H₂ Annealing