[15p-P15-1~17] 13.5 Semiconductor devices and related technologies

[15p-P15-16] S/D electrodes for SiGe HEMT formed by Sputter Epitaxy Method

〇Kyohei Degura¹, Akira Motohashi¹, Katsumi Okubo¹, Nobumitsu Hirose², Akifumi Kasamatsu², Toshiaki Matsui², Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol., 2.National Inst. of Information and Communications Technol.)

Keywords:semiconductor, High Electron Mobility Transistor