[15p-P15-1~17] 13.5 デバイス／集積化技術

▲ [15p-P15-3] Study of Stability of A-few-donor Quantum Dots with Different Configurations for Room-Temperature Single-Electron Tunneling Operation

〇(M2)Hasan KM Tarik¹、Samanta Arup^2,1、Afiff Adnan^1,3、Anh Le The⁴、Manoharan Muruganathan⁴、Hori Masahiro¹、Ono Yukinori¹、Mizuta Hiroshi⁴、Tabe Michiharu¹、Moraru Daniel¹ (1.Res. Inst. of Electronics Shizuoka Univ.、2.Indian Ins. of Tech Roorke, IN、3.GSIST, Shizuoka Univ.、4.Japan Adv. Inst. of Sci. and Tech)

キーワード：Dopant Quantum Dot, Single electron tunneling, Room Temperature

Dopant-atoms have been demonstrated to work as quantum dots (QDs) in Si nano-transistors . These systems have the fundamental property of controlling single-electron tunneling (SET), promising low-power consumption for future electronics . Alternatively, they are attractive for quantum computing, which can bring a breakthrough in computation power. For such applications, room temperature (RT) operation is required and a CMOS-compatible, robust fabrication is necessary.
Here, we first study the stability of a-few-donor QD (in this case, 3 P-donors) against fluctuations of donor number and mainly atomistic position.