[15p-P7-1~5] 15.5 Group IV crystals and alloys

[15p-P7-1] Fabrication of lattice-matched GeSiSn/Ge electron-tunneling double-barrier resonant
tunneling diodes

〇Kazuaki Haneda¹, Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Toshiaki Matsui², Yoshiyuki Suda¹ (1.Tokyo Univ. Agric. Technol., 2.NICT)

Keywords:GeSiSn, Resonant tunneling diodes, RTD