[15p-P8-1~10] 15.7 Crystal evaluation, impurities and crystal defects

[15p-P8-1] The investigation of the proton irradiation defects in silicon power devices using DLTS

〇AKIRA KIYOI¹, TADAHARU MINATO¹, MASAYOSHI TARUTANI¹ (1.Mitsubishielectric Corp.)

Keywords:semiconductor, silicon, point defects