[15p-P8-1~10] 15.7 Crystal evaluation, impurities and crystal defects

[15p-P8-2] First principles calculation of combined impact of dopant and plane stress on formation of intrinsic point defects in single crystal silicon

〇kouji kobayashi¹, shunta yamaoka¹, koji sueoka¹ (1.Okayama Pref Univ.)

Keywords:Single crystal Si, Point defect, Thermal stress