[15p-P8-1~10] 15.7 Crystal evaluation, impurities and crystal defects

△ [15p-P8-6] Calculation of formation energy and thermal equilibrium concentration of C and Sn atoms in SiSnC, GeSnC thin film

〇Kai Tadano¹, Koji Sueoka² (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Okayama Pref. Univ.)

Keywords:surface, thin film