[16a-302-1~11] 12.4 Organic light-emitting devices and organic transistors

[16a-302-8] Influence of contact resistance for organic-inorganic perovskite transistors

〇Toshinori Matsushima^1,2,3, Sunbin Hwang¹, Shinobu Terakawa¹, Takashi Fujihara⁴, Atula S. D. Sandanayaka^1,3, Chuanjiang Qin^1,3, Chihaya Adachi^1,2,3 (1.OPERA, Kyushu Univ., 2.I2CNER, Kyushu Univ., 3.JST/ERATO, 4.ISIT)

Keywords:organic-inorganic perovskite, transistor, contact resistance

The true performance of field-effect transistors with a spin-coated organic-inorganic perovskite (C₆H₅C₂H₄NH₃)₂SnI₄ semiconductor remains unknown because of the presence of the contact resistance. To evaluate the intrinsic carrier mobilities, we fabricated perovskite transistors with large channel lengths. Field-effect carrier mobilities gradually increased as channel lengths were increased and then became constant in a large channel length region because of the reduced contribution of contact resistance relative to the total resistance. The intrinsic carrier mobilities estimated from this region reached 26 and 4.8 cm² V^-1 s^-1 for holes and electrons, respectively, which are the highest ever reported in any perovskite transistor.