[16a-412-1~10] 13.5 Semiconductor devices and related technologies

△ [16a-412-10] Time-domain charge pumping on silicon-on-insulator MOS devices

〇(DC)Tokinobu Watanabe^1,2, Masahiro Hori¹, Toshiaki Tsuchiya³, Akira Fujiwara⁴, Yukinori Ono¹ (1.Shizuoka Univ., 2.Univ. of Toyama, 3.Shimane Univ., 4.NTT Basic Research Labs.)

Keywords:charge pumping, interface defect, SOI

Time-domain charge pumping, which monitors transient currents during the charge pumping process, was applied to silicon-on-insulator (SOI) MOS gated p–i–n diodes. We found that the transient electron current is strongly dependent on the polarity of the back (substrate) gate. Specifically, when the back gate is positively biased, the current peak caused by the electron trap to the interface defects was found to disappear (or significantly weaken), which was attributed to the charging effects of the trapped electrons. The present results reveal the importance of the formation of the back channel and provide important information for further detailed analysis of the charge pumping process in SOI MOS devices.