[Silicon Technology Division Award Speech] Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

Nobuyuki Kuboi; Tetsuya Tatsumi; Takashi Kinoshita; Takushi Shigetoshi; Masanaga Fukasawa; Jun Komachi; Hisahiro Ansai

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[16a-412-1~10] 13.5 Semiconductor devices and related technologies

6.1と13.3と13.5のコードシェアセッションあり

Thu. Mar 16, 2017 9:00 AM - 12:15 PM 412 (412)

Takashi Matsukawa(AIST), Hitoshi Wakabayashi(Titech)

9:45 AM - 10:15 AM

[16a-412-3] [Silicon Technology Division Award Speech] Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

〇Nobuyuki Kuboi¹, Tetsuya Tatsumi¹, Takashi Kinoshita¹, Takushi Shigetoshi², Masanaga Fukasawa¹, Jun Komachi¹, Hisahiro Ansai¹ (1.Sony Semiconductor Solutions Corporation, 2.Sony Semiconductor Manufacturing Corporation)

Keywords:Silicon Technology Division Award