[Silicon Technology Division Award Speech] Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes with Ideal Interface Characteristics

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

Thu. Mar 16, 2017 9:00 AM - 12:15 PM 412 (412)

10:15 AM - 10:30 AM

〇Tomoyuki Suzuki¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Kuniyuki Kakushima¹ (1.Titech)

Keywords:Silicon Technology Division Award