[16a-412-1~10] 13.5 Semiconductor devices and related technologies

[16a-412-5] Parallel Programmable Non-volatile Memory Using Normal SRAM Cells

〇Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Hirofumi Shinohara², Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.Waseda Univ.)

Keywords:non-volatile memory, SRAM

A technique for using a normal SRAM array for programmable non-volatile (NV) memory is proposed. Successful 2kbit NV writing is demonstrated using a device-matrix-array (DMA) TEG fabricated by 0.18μm technology.