[16a-413-1~12] 13.3 Insulator technology

[16a-413-1] Theoretical study on interface orientation dependence of Si thermal oxidation

〇Takuya Nagura¹, Shingo Kawachi², Kenta Chokawa², Hiroki Shirakawa², Masaaki Araiadi^2,3,7, Hiroyuki Kageshima^4,7, Tetsuo Endoh^5,6,7, Kenji Shiraishi^2,3,7 (1.Nagoya Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.IMaSS, Nagoya Univ., 4.Interdisciplinary Graduate School of Science and Engineering, Shimane Univ., 5.Graduate School of Engineering, Tohoku Univ., 6.Center for Innovative Integrated Electronic Systems., 7.JST-ACCEL)

Keywords:semiconductor, thermal oxidation of silicon, first-principles calculation