[16a-413-1~12] 13.3 Insulator technology

[16a-413-9] Direct observation of Si surface band bending induced by the High-k/SiO₂ interface dipoles using laser THz emission microscope

〇Yasushi Hotta¹, Ikuya Saiki¹, Shintaro Nishi¹, Akira Itoh², Hidetoshi Nakanishi², Haruhiko Yoshida¹, Koji Arafune¹, Shin-ichi Satoh¹, Masayoshi Tonouchi³, Iwao Kawayama³ (1.Univ. of Hyogo, 2.SCREEN, 3.Osaka Univ.)

Keywords:laser terahertz-emission microscope, interface dipole, tricolor superstructure

By using laser terahertz-emission microscope, we investigated the impact of the electric dipoles formed at a High-k/SiO₂ interface to the surface band structure of a Si substrate.