The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

12 Organic Molecules and Bioelectronics » 12.3 Functional Materials and Novel Devices

[16a-416-1~10] 12.3 Functional Materials and Novel Devices

Thu. Mar 16, 2017 9:00 AM - 11:45 AM 416 (416)

Yoshiyuki Nonoguchi(NAIST), Kouji Suemori(AIST)

11:15 AM - 11:30 AM

[16a-416-9] Field Modulation Imaging of Domain-Wall Structures in Organic Ferroelectrics

〇(M1)Yohei Uemura1, Shunto Arai1, Junya Tsutsumi2, Satoshi Matsuoka2, Hiroyuki Yamada2, Sachio Horiuchi2, Tatsuo Hasegawa1,2 (1.U. Tokyo, 2.AIST)

Keywords:organic ferroelectrics, observation of ferroelectric domain motion, domain observation technique of ferroelectrics

Recently, proton-transfer type organic ferroelectrics which have small coercive electric field have been reported and are expected to be key materials for low voltage driving devices. For the development of devices, observation of domain motion in single crystal thin films is inevitable.
So far, we have developed an optical technique “Ferroelectrics field modulation imaging (FFMI)” in order to visualize the domain structure, which detects the change of optical spectrum induced by modulation electric field by using an area imaging sensor.
This time, we observed the dynamics of domain motion in thin films using FFMI. In addition, we focused on domain walls and analyzed the intensity distribution of FFMI signal across them because FFMI signal indicate the domain structure in the thickness direction of films. On the day, we discuss the broad domain walls due to the lap of polarization, and the motion of domain walls.