9:30 AM - 9:45 AM
[16a-419-3] Formation Mechanism of Conducting Path in Resistive Random Access Memory ~ Verification of a grain surface tiling model ~
Keywords:ReRAM, grain boundaries, Metal oxide
Oral presentation
6 Thin Films and Surfaces » 6.3 Oxide electronics
Thu. Mar 16, 2017 9:00 AM - 12:15 PM 419 (419)
Yusuke Nishi(Kyoto Univ.)
9:30 AM - 9:45 AM
Keywords:ReRAM, grain boundaries, Metal oxide