The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K

[16a-502-1~12] 21.1 Joint Session K

Thu. Mar 16, 2017 9:00 AM - 12:15 PM 502 (502)

Toshio Kamiya(Titech)

9:00 AM - 9:15 AM

[16a-502-1] High-Performance Rare-Metal-Free Ga-Sn-O Thin-Film Transister

〇(B)Kenta Umeda1, Tokiyoshi Matsuda2, Mutsumi Kimura1,2 (1.Ryukoku Univ., 2.Innovative Materials &Processing Research Ctr.)

Keywords:Oxide Semiconductor, Ga-Sn-O, Thin-Film Transister

Recently, Research and development and practical application of IGZO TFT is thriving as amorphous oxide semiconductor TFT of high performance and low temperature production.
However, Indium contained in IGZO has problems of resource exhaustion.
Therefore, we focused on rare-metal-free oxide semiconductor Ga-Sn-O(GTO), succeeded in developing high performance TFT.