[16a-502-1~12] 21.1 Joint Session K

[16a-502-8] Impact of Si Ion Implantation on Properties of IGZO Thin Films

〇Tetsuya Goto¹, Fuminobu Imaizumi¹, Shigetoshi Sugawa¹ (1.Tohoku Univ.)

Keywords:IGZO, Ion Implantation, Carrier concentration

For amorphous InGaZnO (a-IGZO) thin film transistors (TFTs), impurity doping using the ion implantation technique was introduced to explore the possibility of controlling carrier concentration. It was found that the carrier concentration could be controlled by a dose of implanted Si which was known as n-type dopants for Ga₂O₃, and also, their controllability sensitively depended on the atomic ratio of In, Ga and Zn in the film.