Fabrication of CMOS/LED-mixed monolithic integrated circuits using Si/SiO<sub>2</sub>/GaN-LED substrate

Syota Nakagawa; Kazuaki Tsuchiyama; Syu Utsunomiya; Keisuke Yamane; Hiroto Sekiguchi; Hiroshi Okada; Akihiro Wakahara

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16a-503-1~12] 15.4 III-V-group nitride crystals

Thu. Mar 16, 2017 9:00 AM - 12:15 PM 503 (503)

Yoshio Honda(Nagoya Univ.), Ryota Ishii(Kyoto Univ.)

10:45 AM - 11:00 AM

△ [16a-503-7] Fabrication of CMOS/LED-mixed monolithic integrated circuits using Si/SiO₂/GaN-LED substrate

〇(M1)Syota Nakagawa¹, Kazuaki Tsuchiyama¹, Syu Utsunomiya¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada², Akihiro Wakahara¹ (1.TUT, 2.TUT EIIRIS)

Keywords:monolithic integrated, surface-activated wafer bonding, GaN

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Presentation information

[16a-503-1~12] 15.4 III-V-group nitride crystals

△ [16a-503-7] Fabrication of CMOS/LED-mixed monolithic integrated circuits using Si/SiO2/GaN-LED substrate

△ [16a-503-7] Fabrication of CMOS/LED-mixed monolithic integrated circuits using Si/SiO₂/GaN-LED substrate