[16a-B5-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [16a-B5-8] Characterization of p-BaSi₂/n-Si solar cells using Boron-doped p-BaSi₂ on textured n-Si (001) grown by molecular beam epitaxy

〇(D)Tianguo Deng¹, Ryota Takabe¹, Zhihao Xu¹, Kaoru Toko¹, Kazuhiro Gotoh², Noritaka Usami², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Nagoya Univ.)

Keywords:barium disilicide, textured substrate

Barium disilicide (BaSi₂) has attractive features for solar cell application such as a suitable band , a large minority-carrier lifetime (τ ~ 10 μs) and a large minority-carrier diffusion length (L ~ 10 μm) . Power conversion efficiency (η) was expected to be larger than 25% only in a 2-μm-thick BaSi₂ pn junction diode. In our previous work, it was demonstrated that a-axis of BaSi₂ was oriented normal to the (111)-oriented texture on the Si(001) substrate and light trapping took place . To ensure how thickness and hole concentration of boron(B)-doped p-BaSi₂ influence the performance of p-BaSi₂/n-Si hetero-junction solar cell, in this study, we attempted to grow a series of B-doped p-BaSi₂ with different thickness and hole concentration on textured Si (001).