Silicon Nitride Film Formations Using the New Magnetically-Confined ECR Plasma Source for Minimal Fab System

Tetsuya Goto; Kei-ichiro Sato; Yuki Yabuta; Shigetoshi Sugawa; Shiro Hara

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[16a-E206-1~13] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Thu. Mar 16, 2017 9:00 AM - 12:15 PM E206 (E206)

Masato Sone(Titech), Masahide Goto(NHK)

9:30 AM - 9:45 AM

[16a-E206-3] Silicon Nitride Film Formations Using the New Magnetically-Confined ECR Plasma Source for Minimal Fab System

〇Tetsuya Goto¹, Kei-ichiro Sato², Yuki Yabuta³, Shigetoshi Sugawa¹, Shiro Hara^4,5 (1.Tohoku Univ., 2.Kotec, 3.Seinan Industries, 4.AIST, 5.MINIMAL)

Keywords:minimal fab system, silicon nitride, Plasma CVD

We developed a new compact magnetic mirror confined ECR plasma source for the plasma CVD used in the minimal fab system which has been developed by AIST as the new semiconductor manufacturing system. Silicon nitride film could be successfully formed at 400ºC, and its quality was found to be the same level as that formed by LPCVD at 750ºC.