[16a-F201-1~12] 13.10 Compound solar cells

▲ [16a-F201-2] Study of the electrical properties of CuGaSe₂ thin-film solar-cells using admittance spectroscopy

〇Muhammad Monirul Islam¹, Shogo Ishizuka², Hajime Shibata², Shigeru Niki², Katsuhiro Akimoto¹, Takeaki Sakurai¹ (1.Tsukuba Univ., 2.AIST)

Keywords:CuGaSe2, Admittance spectroscopy, Solar-cell

Defect characterization has been performed for the CuGaSe₂-based solar-cell structures using junction-capacitance technique, viz. admittance spectroscopy (AS). Polycrystalline CuGaSe₂ thin-films with different Se-flux condition were deposited through three-stage co-evaporation process. Temperature dependent AS reveals two major peaks around 50 meV and 350 meV above the valance band of the CuGaSe₂, respectively. In general, CuGaSe₂ samples grown with higher Se-flux condition show lower defect density, and improved solar-cell performances. Temperature-dependent AC-conductance, and capacitance-voltage measurement was performed to obtain transport properties, charge-density etc., and discussed in relation to the Se-flux condition during deposition of the CuGaSe₂ films.