[16a-F203-1~11] 17.3 Layered materials

[16a-F203-8] Fabrication of enhancement-mode MoS₂ transistors by ozone oxidation

〇Nobuhiko Adachi¹, Yoshihiko Shimokawa¹, Kosuke Sano¹, Takahisa Tanaka¹, Tsunaki Takanashi^1,2, Ken Uchida¹ (1.Keio Univ., 2.Kyushu Univ.)

Keywords:molybdenum disulfide, transistor, oxidation