9:45 AM - 10:00 AM
[16a-F204-3] Optical Characterizations of Ge epitaxial layers grown on SOQ substrate
Keywords:Germanium, Silicon-on-sapphire
Ge layer epitaxially grown on SOI (Si-on-insulator) is a candiate as a material for photodetector and optical modulator in Si photonics. We successfilly induce lager strain to Ge by being grown on Si-on-Quartz substrate.