The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

3 Optics and Photonics » 3.15 Silicon photonics

[16a-F204-1~11] 3.15 Silicon photonics

3.13と3.15のコードシェアセッションあり

Thu. Mar 16, 2017 9:15 AM - 12:15 PM F204 (F204)

Tatsuro Hiraki(NTT), Hideo Isshiki(UEC Tokyo)

9:45 AM - 10:00 AM

[16a-F204-3] Optical Characterizations of Ge epitaxial layers grown on SOQ substrate

〇(M1)Michiharu Nishimura1, Jiro Osaka1, Yasuhiko Ishikawa1 (1.Univ. of Tokyo)

Keywords:Germanium, Silicon-on-sapphire

Ge layer epitaxially grown on SOI (Si-on-insulator) is a candiate as a material for photodetector and optical modulator in Si photonics. We successfilly induce lager strain to Ge by being grown on Si-on-Quartz substrate.