[16a-F204-1~11] 3.15 Silicon photonics

[16a-F204-3] Optical Characterizations of Ge epitaxial layers grown on SOQ substrate

〇(M1)Michiharu Nishimura¹, Jiro Osaka¹, Yasuhiko Ishikawa¹ (1.Univ. of Tokyo)

Keywords:Germanium, Silicon-on-sapphire

Ge layer epitaxially grown on SOI (Si-on-insulator) is a candiate as a material for photodetector and optical modulator in Si photonics. We successfilly induce lager strain to Ge by being grown on Si-on-Quartz substrate.