[16a-F204-1~11] 3.15 シリコンフォトニクス

▲ [16a-F204-5] Monolithic Integration of Ge Photodetector with Amorphous Si Waveguide on the Ge-on-Insulator Substrate

〇(D)亢 健^1,2、高木 信一^1,2、竹中 充^1,2 (1.東大院工、2.JST-CREST)

キーワード：GeOI, a-Si

Ge is now gathering many attentions for integrated photonics due to its many useful optical properties. To realize a high-quality Ge thin film on Si platform, wafer bonding is promising. Recently, we have achieved high-quality Ge-on-Insulator (GeOI) wafer by wafer bonding which enables strong optical confinement for compact photonic integration. In this work, we present a proof-of-concept of a Ge/a-Si hybrid platform based on the bonded GeOI wafer.