[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-1] Annealing of hydrogen-ion-implanted n-GaN

〇Ken Iyoda¹, Kouta Takabayashi¹, Yutaka Tokuda¹, Shiojima Kenji², Jyoji Ito³, Takahide Yagi³ (1.Aichi Inst. of Tech., 2.University of Fukui., 3.S.H.I. Examination & Inspection,Ltd.)

Keywords:hydrogen imprantation, GaN, DLTS

We have studied the annealing behavior of hydrogen implanted n-GaN using DLTS. The GaN used was Si-doped (8.0x10¹⁶ cm^-3) n-GaN grown by MOCVD on n⁺-GaN substrate. The hydrogen implantation dose were 10¹³ and 10¹⁴ cm^-2. In the 10¹³ cm^-2 sample, trap labeled E0 with the energy level of E_c-0.13 eV appears as a dominant electron trap. It was impossible to perform DLTS measurements for the 10¹⁴ cm^-2 sample, because of its high resistivity. After annealing at 450℃ for three hours, we could perform DLTS measurements due to the annealing of induced defects. Four electron traps were newly observed for the 10¹⁴ cm^-2 sample annealed at 450℃. Relatively low temperature annealing causes the annealing and generation of defects in hydrogen-implanted n-GaN.