Surface Stabilization of AlGaN/GaN HEMT by Plasma Enhanced Atomic Layer Deposited SiN<sub>x</sub> Film with HCl Surface Treatment

TAKAYUKI SUZUKI; KOSUKE TSUCHIYA; TAKAHIRO OHBO; YOSHIHIKO AKAZAWA; TAKASHI SHIMONO; KOTA MATSUMOTO; TAKUYA EGUCHI; NAOTAKA IWATA

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Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P4 (BP)

9:30 AM - 11:30 AM

[16a-P4-13] Surface Stabilization of AlGaN/GaN HEMT by Plasma Enhanced Atomic Layer Deposited SiN_x Film with HCl Surface Treatment

〇TAKAYUKI SUZUKI¹, KOSUKE TSUCHIYA¹, TAKAHIRO OHBO¹, YOSHIHIKO AKAZAWA¹, TAKASHI SHIMONO¹, KOTA MATSUMOTO¹, TAKUYA EGUCHI¹, NAOTAKA IWATA¹ (1.Toyota Tech. Inst.)

Keywords:GaN, HEMT, ALD

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Presentation information

[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-13] Surface Stabilization of AlGaN/GaN HEMT by Plasma Enhanced Atomic Layer Deposited SiNx Film with HCl Surface Treatment

[16a-P4-13] Surface Stabilization of AlGaN/GaN HEMT by Plasma Enhanced Atomic Layer Deposited SiN_x Film with HCl Surface Treatment