[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-16] V/III ratio dependence of electrical properties of drift layer growth in a vertical device of GaN layer on Si substrate

〇Takeaki Hamada¹, Yuya Urayama¹, Suguru Mase¹, Keisuke Nakamura¹, Takashi Egawa¹ (1.Nagoya Inst. Tech)

Keywords:semiconductor, crystal growth, vertical device of GaN